JPH071812Y2 - マルチビーム半導体レーザ装置 - Google Patents
マルチビーム半導体レーザ装置Info
- Publication number
- JPH071812Y2 JPH071812Y2 JP1988149845U JP14984588U JPH071812Y2 JP H071812 Y2 JPH071812 Y2 JP H071812Y2 JP 1988149845 U JP1988149845 U JP 1988149845U JP 14984588 U JP14984588 U JP 14984588U JP H071812 Y2 JPH071812 Y2 JP H071812Y2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor laser
- electrode
- heat sink
- solder material
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title claims description 22
- 239000000463 material Substances 0.000 claims description 21
- 229910000679 solder Inorganic materials 0.000 claims description 20
- 238000000926 separation method Methods 0.000 claims description 8
- 230000004927 fusion Effects 0.000 claims description 7
- 238000000034 method Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 3
- 229910020220 Pb—Sn Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910017855 NH 4 F Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000007779 soft material Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1988149845U JPH071812Y2 (ja) | 1988-11-16 | 1988-11-16 | マルチビーム半導体レーザ装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1988149845U JPH071812Y2 (ja) | 1988-11-16 | 1988-11-16 | マルチビーム半導体レーザ装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0270471U JPH0270471U (en]) | 1990-05-29 |
| JPH071812Y2 true JPH071812Y2 (ja) | 1995-01-18 |
Family
ID=31422448
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1988149845U Expired - Lifetime JPH071812Y2 (ja) | 1988-11-16 | 1988-11-16 | マルチビーム半導体レーザ装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH071812Y2 (en]) |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4069463A (en) * | 1976-09-02 | 1978-01-17 | International Business Machines Corporation | Injection laser array |
-
1988
- 1988-11-16 JP JP1988149845U patent/JPH071812Y2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0270471U (en]) | 1990-05-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5604761A (en) | Layered semiconductor laser having solder laminations and method of making same | |
| JPH071812Y2 (ja) | マルチビーム半導体レーザ装置 | |
| JPH0623011Y2 (ja) | マルチビーム半導体レーザ装置 | |
| JP2874819B2 (ja) | 半導体装置 | |
| JPS60227446A (ja) | 半導体装置の製造方法 | |
| JPH09232677A (ja) | 半導体レーザ | |
| JP4704703B2 (ja) | アレイ型半導体レーザ装置 | |
| JPH07307520A (ja) | スタック型半導体レーザ装置の組立て方法 | |
| JP2523110Y2 (ja) | マルチビ−ム半導体レ−ザ装置 | |
| JPH05183239A (ja) | 半導体レーザ装置 | |
| JP2009147205A (ja) | 導波路型固体レーザ媒質および導波路型レーザ装置 | |
| JPS63122187A (ja) | 半導体レ−ザ | |
| JP2503920B2 (ja) | 光半導体装置およびその製造方法。 | |
| JP2008047761A (ja) | 半導体レーザ装置 | |
| JPH04329681A (ja) | 光半導体装置の製造方法 | |
| JPH0444285A (ja) | 半導体発光素子 | |
| JPH0543565U (ja) | マルチビーム半導体レーザ装置 | |
| JP2019212859A (ja) | 半導体レーザー素子 | |
| JPH07321412A (ja) | 半導体装置 | |
| JPH0245994A (ja) | 面発光レーザ素子の製造方法 | |
| JPH08139408A (ja) | 半導体発光素子 | |
| KR100223835B1 (ko) | 레이저 다이오드의 서브마운트 제조방법 | |
| JPH05251827A (ja) | 光半導体素子の実装方法 | |
| JP2528020Y2 (ja) | 半導体レーザ装置 | |
| JPH05226771A (ja) | 半導体レーザ |